In an isolation-diffused power semiconductor diode, the object has been set of providing a structure which results in a simplified manufacture while retaining the essential electrical parameters. In an isolation-diffused power semiconductor diode, this object is achieved in that the p-n junction (10) does not emerge in a passivation trench but directly at a first main surface (3) of the diode and is covered at that point in a planar manner by a passivation layer (11). The sole figure of the drawing is significant. <IMAGE>
