| 摘要 |
PURPOSE:To obtain the semiconductor device enable to perform high speed action and enabled to form in high density by a method wherein a P<+> type layer and an N<+> type layer are provided at a part of a P type Si substrate, and a gate electrode is provided between both interposing an SiO2 film between them. CONSTITUTION:The P<+> type source 12 is held at zero potential, and the N<+> type drain 13 is made to have positive potential. Potential of the P type substrate is decided nearly by potential of the source. When the absolute value of the voltage of the gate electrode 5 is small, and no high concentration carrier region exists in the surface of the substrate, a thick depletion layer is generated at the junction of the substrate and the drain to make no drain current to flow. When a sufficiently negative voltage is applied to the gate electrode 5, and holes are stored in high concentration in the surface of the substrate, the drain current begins to flow. Moreover when a voltage higher than the threshold is applied to the electrode 5 to form an inversion layer of electrons in the surface of the substrate, the depletion layer is not extended, and the drain current can be controlled. The device thereof is not conducted completely up to generation of an avalanche or the tunnel effect of carriers, and indicates an ideal characteristic (a dotted line) without generating an weak inversion region as usual. However because the device is provided with no current limiting structure, it is necessary to insert a resistor in series. |
