| 摘要 |
PURPOSE:To reduce leak current without using an offset gate structure by providing a low-resistance part which is subject to selective doping and other high-resistance part within a gate electrode. CONSTITUTION:In a polysilicon thin-film transistor formed on an insulating substrate, a low-resistance part 5-1 which is subject to selective doping and other high-resistance part 5-2 are provided within a gate electrode 5. For example, the gate electrode 5 of an n-channel inversion type thin-film transistor gate electrode 5 where a source area 6 and a drain area 7 are formed at a polysilicon film 3 consists of a low-resistance part 5-1 where n-type impurity are selectively doped in high concentration and a high-resistance part 5-2 where no impurity is doped. Thus, due to voltage drop within the gate electrode where no impurity are doped selectively, no channel is generated at the part below the gate electrode, an offset part is effectively formed, and electric field near the drain electrode can be relaxed. |
