OPTOELECTRONIC INTEGRATED SEMICONDUCTOR DEVICE

摘要

PURPOSE: To make it possible to integrate means for separating components TE and TM on a III-V material and to obtain a low-loss separator of TE and TM polarize waves by constituting these means of metallic layers extending between the projecting lines for waveguide of a surface having a hetero structure over lengths. CONSTITUTION: The separator of the TE and TM polarized waves is formed on a substrate S consisting of the III-V material and has the transverse size W integrated on the substrate S. The separator has two pieces of light guides G1 and G2 which consist of the III-V material and are parted by an edge-to-edge spacing (d). In such a case, both guides are composed of the hetero structure (S/C1 ) and the two parallel projecting lines R for waveguide disposed on its surface. The means for separating the components TE and TM has the metallic layer 10 extending over the length D between the projecting lines R for the waveguide on the surface of the hetero structure. The length D is set at the relation between the coupling length Lc(TE) of the component TE and D=Lc(TE). The physical parameter of the device is so selected as to satisfy the relation Lc(TE)=2Lc(TM) [Lc(TM) is the coupling length of the component TM]. As a result, the separator having the low loss is obtd. by using the III-V material.