发明名称 SEMICONDUCTOR MEMORY
摘要 PURPOSE:The stop of a contact part of a bit wire with a lead-out electrode is made small so as to prevent the disconnection due to the step by a method wherein the lead-out electrode is formed thoroughly surrounding a flat insulating film provided between a pair of gate electrodes. CONSTITUTION:A bit wire 16 formed of aluminum or the like is connected to the part of a lead-out electrode 11b which covers the upside of a flat insulating film 17b, where the lead-out electrode 11b surrounds the flat lead-out electrode 11b provided between a pair of gate electrodes 4 and 5. Therefore, the contract part of the electrode 11b with the bit wire 16 is made higher in level by the thickness of the film 17b, so that the step of the contact part of the bit wire 16 made smaller. And, the thicker the film 17b is made, the smaller the step of the contact part of the bit wire 16 becomes. By these processes, the disconnection caused by the step of a bit wire can be prevented.
申请公布号 JPH0260162(A) 申请公布日期 1990.02.28
申请号 JP19880212158 申请日期 1988.08.25
申请人 SONY CORP 发明人 KURODA HIDEAKI
分类号 H01L27/04;H01L21/822;H01L21/8242;H01L27/10;H01L27/108 主分类号 H01L27/04
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