发明名称 |
Apparatus including resonant-tunneling device having multiple-peak current-voltage characteristics |
摘要 |
A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure.
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申请公布号 |
US4902912(A) |
申请公布日期 |
1990.02.20 |
申请号 |
US19890366340 |
申请日期 |
1989.06.13 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
CAPASSO, FEDERICO;CHO, ALFRED Y.;SEN, SUSANTA;SHOJI, MASAKAZU;SIVCO, DEBORAH |
分类号 |
G11C11/56;H01L29/76;H01L29/88;H03B19/16 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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