MANUFACTURING METHOD OF AN IC AND DEVICE

摘要

(a) forming an amorphous or poly-semiconductor layer on an amorphous insulating layer; (b) adding an anti-reflecting film; (c) forming windows in the film; (d) irradiating to recrystallise the layer in the windows; and (e) forming devices or active regions in the recrystallized areas. The anti-reflecting layer is Si3N4(silicon nitride) or SiO2(silicon dioxide)/Si3N4.