| 摘要 |
PURPOSE:To improve the productivity by using existing facilities of a production line and to make the mechanical strength of a substrate as high as silicon by a method wherein a Ga1-xAlxAs single crystal is grown on the substrate composed of a silicon wafer and a p-n junction is formed in this layer. CONSTITUTION:The surface of a silicon single-crystal silicon wafer 11 is oxidized thermally; an SiO2 film 12 is formed. Holes 28 with a diameter of 1 to 2mum are made at intervals of 50mum by a photolithographic technique. Then, W 22 in 5000Angstrom is deposited on it; G11-xAlxAs 23 is precipitated on it by an MOCVD method. During this process, an n-type impurity is added simultaneously; a low-resistance polycrystal is formed. Si3N4 24 is deposited on it by a sputtering operation; the surface of this sample is covered with polyethylene glycol 15; this assembly is pressed by using a cover glass 17 so as to make the polyethylene glycol 15 uniform. A beam of an Ar ion laser is converged by using a lens; the surface of the sample is irradiated; a fused band 16 is formed; this fused band 16 is shifted and transformed into a single crystal. After that, an ordinary method is used and a light-emitting diode is manufactured. |
