| 摘要 |
<p>PURPOSE:To evaluate and judge the quality of a single-crystal substrate quantitatively and to obtain a stable device yield by a method wherein a silicon single crystal is heat-treated within a specific temperature range, a size of a nucleus and an amount of a precipitate in the silicon single crystal are measured and a decreased amount of oxygen or a density of the precipitate after the heat treatment is measured. CONSTITUTION:A silicon single crystal is heated within a temperature range of 500 to 1200 deg.C and within a range of 1 to 50 hours and is heat-treated; after that, a decreased amount of oxygen by this heat treatment is measured by an infrared absorption difference spectrum method. Alternatively, a density of a precipitate is measured by a selective etching method. In this manner, an intrinsic gettering capacity and an excess precipitation of the silicon single crystal are judged. Thereby, a leakage can be suppressed to be low; an irregularity is reduced. Accordingly, when the quality of a single-crystal substrate is evaluated and judged quantitatively, an amount of a precipitate formed in the silicon single crystal becomes definite, and a stable device can be obtained.</p> |
