| 摘要 |
PURPOSE:To remove impossibility of wire bonding arising from solder flow at the time of die-bonding by providing a projected step at the face that a gallium electric field effect transistor (GaAs FET) is mounted of a heat radiation block. CONSTITUTION:A projected step 9 is provided at the face that a GaAs FET4 is mounted of a heat radiation block 3, and thereon a wire 7 from the source is bonded. That is, the GaAs FET 4 is connected to a pattern 2 for die-bonding through a drain pattern 5, a source pattern 6, and a heat radiation block 3 by means of wires 7. Accordingly, it becomes possible to separate the die bonding face of the GaAs FET and the wire bonding face of the source. Hereby, even if the solder of die-bonding flows, the possibility of its spreading onto the wire bonding face becomes very small. |
