| 摘要 |
PURPOSE:To find out a specific memory cell regardless of memory capacitance by increasing the number of contact hole in an arithmetic series manner in a matrix-shaped semiconductor memory and repeatedly arranging basic patterns, in which sections not bored are formed among sections connecting said contact holes one by one. CONSTITUTION:Source lines 8 for taking the reference potential of memory cells 5 are disposed at every several bit line 6 in a memory array region. It is because the source electrode sides of the mutual transistors of the cells 5 are connected to a pattern shape. Contact holes 9 on the lines 8 are removed partially, and can be used as marks. The number of the continuous array of the holes is increased in an arithmetic series manner, and the omitting positions of the holes 9 are arranged to the partitioning sections of the holes. Basic patterns within an arbitrary range shaped in this manner are disposed repeatedly in the array region, thus detecting the specific memory cell 5 without errors. |
