LASER USING SEMICONDUCTOR

摘要

The semiconductor laser device with a SQW type or a MQW type can be obtained by forming a spatial fluctuation of potential so that the potential differs from position to position inside a plane perpendicular to a current flowing direction. Electrons and holes or excitons formed by a combination of them can be localised not only in the current flowing direction but also inside the plane perpendicular to the current flowing direction. Corrugations or ruggedness having a mean pitch of below 100nm and a level difference of from 1/10 to 1/2 of the mean thickness of an active layer are formed on the surface of the active layer of the semiconductor laser.