THIN FILM TRANSISTOR AND ACTIVE MATRIX CIRCUIT BOARD AND IMAGE DISPLAY DEVICE FORMED BY USING THE SAME TRANSISTOR

摘要

PURPOSE:To improve reproducibility by forming the region of a gate insulating film to the thickness of an a-Si film or above from the front end of drain and source electrodes, continuously forming the a-Si film and a protective film and shifting the protective film to an inner side by the thickness of the drain and source electrodes or above. CONSTITUTION:The a-Si film 4 and the 2nd insulating film 10 are continuously formed and the a-Si film is removed from the region sandwiched by the gate electrode 2 and the drain electrode 5 and the region sandwiched by the gate electrode 2 and the source electrode 6 at the distance above the thickness of the a-Si film 4. The insulating film 10 on the a-Si film 4 is then removed at the distance above the constituting film thickness of the drain electrode 5 and the source electrode 6. The sure contact of the a-Si film and the drain electrode 5 and the source electrode 6 is obtd. in such a manner. The characteristic defect by a contact defect is eliminated and the reproducibility is enhanced.