INSULATED GATE FIELD EFFECT TRANSISTOR,申请号JP19880151278-传众专利搜索

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发明名称	INSULATED GATE FIELD EFFECT TRANSISTOR
摘要
申请公布号	JPH023975(A)	申请公布日期	1990.01.09
申请号	JP19880151278	申请日期	1988.06.21
申请人	TOSHIBA CORP	发明人	ODA YUJI
分类号	H01L29/78	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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