| 摘要 |
PURPOSE: To attain efficient patterning of a vacuum depositted layer by conducting the patterning process under a high vacuum condition in combination with high vacuum layer deposition. CONSTITUTION: In the case of patterning a first layer by exposing a removal agent to the first layer 2 under the presence of a second layer 3 whose pattern is drawn so as to remove a selected part of the first layer 2, the second layer 3 is depositted on the first layer 2 as a semiconductor material layer, then the deposition of the second layer 3 on the first layer 2, the patterning of the second layer 3, removal of the material of the first layer are executed under a high vacuum condition. The thickness of the second layer 3 is 10nm or below, depositted as an epitaxial layer, the epitaxial layer is depositted further more without removing the material 4 of the second layer 3 after the patterning of the first layer 2. The second layer 3 is patterning-processed by using a developer (the same as the removal agent) by exposing ion beam to the second layer 3. The first layer 2 is selectively removed by dry etching.
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