| 摘要 |
PURPOSE:To obtain a photovoltaic device having high photoelectric conversion efficiency by composing at least the I-type semiconductor layer of the photovoltaic device by the junctions of a P-type semiconductor layer, the I-type semiconductor layer and an N-type semiconductor of zinc atom, selenium atoms and at least hydrogen atoms. CONSTITUTION:An electrode 102, an N-type semiconductor layer 103, an I-type semiconductor layer 104, a P-type semiconductor layer 105, a transparent electrode 106 and a collecting electrode 107 are formed onto a supporter 101 in the order, thus shaping a photovoltaic device 100. At least the I-type semiconductor layer in these semiconductor layers consists of zinc atoms, selenium atoms and at least hydrogen atoms, the hydrogen atoms are contained in 1-4atomic% quantity, and the I-type semiconductor layer is constituted of a deposit film in which the rate of crystal grains per unit volume is brought to 65-85vol.%. Accordingly, photoelectric conversion efficiency having efficiency particularly higher to short wavelength light than a photovoltaic device using P-I-N junctions is acquired. |
