发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent initial connection failure at the connection part by subjecting a metallic fine line to ultrasonic vibration before and after bringing the metallic fine line into contact with the surface electrode. CONSTITUTION:An Au line 2 is melted using an electric torch 4 so as to produce an Au ball 2a, and next the Au ball 2a is subjected to ultrasonic vibration before contact with an Al electrode 1a. Next, after bringing the Au ball 2a into contact with the surface electrode 1a, it is further subjected to ultrasonic vibration, and by this ultrasonic vibration and heat energy which was added beforehand to a semiconductor 1, the surface oxide film of the Al electrode 1a is broken so as to form alloy of Al and Au, whereby connection of the Al electrode 1a and Au line 2 is performed. Since the Au ball 2a is also subjected to ultrasonic vibration before contact with the Al electrode 1a, the surface oxide film of the Al electrode 1a can be broken efficiently, and initial connection failure of Au and Al or their initial separation can be prevented.
申请公布号 JPH01321645(A) 申请公布日期 1989.12.27
申请号 JP19880155843 申请日期 1988.06.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 KIMURA MICHITAKA
分类号 H01L21/607;H01L21/60 主分类号 H01L21/607
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