| 摘要 |
PURPOSE:To obtain a high-quality photosensitive body free from pinholes by introducing a gas for forming a film and setting a gas pressure to a stational state without applying high frequency power, and then, applying said power to form an amorphous silicon germanium layer. CONSTITUTION:A substrate and a glow discharge electrode plate are set in the inside of a reaction chamber, the film forming gas is introduced into the chamber, the gas pressure is substantially set to a stationary state, and then, high frequency power is applied to cause glow discharge, and the amorphous silicon germanium (a-SiGe) layer is thus formed on the substrate, and next, a photoconductive amorphous semiconductor layer is laminated on the a-SiGe layer. The high frequency power is not applied until the gas has been introduced and the pressure has been set to the stationary state, thus permitting reflection fluctuation in the high frequency power not to occur, a prescribed amount or more of GeH4 to be introduced, and the obtained photosensitive body to be freed of pinholes and enhanced in quality. |
