| 摘要 |
<p>PURPOSE:To prevent the exfoliation of a gate insulating film by constituting picture element electrodes of a transparent conductive film consisting of a metal oxide and providing a metallic protective film covering the picture element electrodes up to the circumferential ends thereof onto the picture element electrodes. CONSTITUTION:The metallic film 1 for gates, an ITI film 2, and the metallic protective film 3 are formed on a light transparent insulating substrate and the metallic protective film 3 is subjected to patterned etching except the pattern parts covering the surface of the ITO film 2 and the circumferential ends. A gate SiN film 4, an a-Si film 5, and a passivation film SiN 6 are then successively laminated thereon and the SiN film 6 is etched. After an n<+>-SiN 7 is formed by etching the film 6, the a-Si film 5 and the gate SiN film 4 are etched to the required pattern. Further, an electrode film 8 is formed and patterned and thereafter, the metallic protective film 3 covering the ITO film 2 is etched away to the desired pattern to provide apertures. The ITO film 2 is exposed from these apertures and the protective film 9 is coated over the entire surface of the element. The foliation of the gate insulating film is thereby prevented.</p> |
