摘要 |
<p>Thin-film superconductor device, characterized by a high critical temperature and high current density, which comprises a substrate, a layer of a polycrystalline binary alloy, formed of two elements having different melting temperatures, layed on the substrate, a polycrystalline layer made of metal oxides, used as a crystalline buffer and having a structure compatible with the superconductor film, and a superconductor layer of the type YBa2Cu3O7-x formed on the buffer. The metal oxide and superconductor layers are grown by epitaxial or quasi rheutaxial growth. The superconductor layer is annealed under O2 at about 800 DEG C.</p> |