PROCESS FOR GROWING SILICON CARBIDE WHISKERS BY UNDERCOOLING

摘要

A method of growing silicon carbide whiskers, especially in the beta form, using a heating schedule wherein the temperature of the atmosphere in the growth zone of a furnace is first heated to or beyond the growth temperature and then is cooled to or below the growth temperature to induce nucleation of whiskers at catalyst sites at a desired point in time which results in the selection.