发明名称 |
METHOD OF FORMING A WIDE DEEP DIELECTRIC FILLED ISOLATION TRENCH IN THE SURFACE OF A SILICON SEMICONDUCTOR SUBSTRATE |
摘要 |
A method of forming a wide deep dielectric filled isolation trench in the surface of a silicon semiconductor substrate by forming a wide plug of chemical vapor deposited silicon dioxide in the trench, filling the remaining unfilled trench portions by chemical vapor depositing a layer of silicon dioxide over the substrate and etching back this layer. The method produces chemically pure, planar wide deep dielectric filled isolation trenches and may also be used to simultaneously produce narrow deep dielectric filled isolation trenches. |
申请公布号 |
DE3279966(D1) |
申请公布日期 |
1989.11.02 |
申请号 |
DE19823279966 |
申请日期 |
1982.12.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU, SHAO-FU;HO, ALLEN PANG-I;HORNG, CHENG TZONG;KEMLAGE, BERNARD MICHAEL |
分类号 |
H01L21/76;H01L21/302;H01L21/3065;H01L21/31;H01L21/3105;H01L21/311;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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