| 摘要 |
<p>A device comprising semiconductor elements and conductor tracks of an oxidic superconducting material, electrically conductive connections being formed between semiconductor elements and conductor tracks, is provided with an electrically conductive antidiffusion layer between the semiconductor elements and the conductor tracks. The antidiffusion layer is composed of an amorphous alloy having the composition AxE1-x, wherein A is selected from one or more of the elements Zr, Nb, Mo, Ru, Rh, Pd, Hf, Ta, W, Re, Os, Ir and Pt, wherein E is selected from one or more of the elements B, Si, Al, Ga and Ge, and wherein x has a value of from 0.7 to 0.95.</p> |
