| 摘要 |
PURPOSE:To obtain aluminum wirings which are hardly corroded with high reliability by plasma oxidizing the surface of a thin aluminum film and then forming by a photocomposing method a wiring pattern. CONSTITUTION:A connecting hole 4 with an impurity layer 2 is formed at an SiO2 film 3 on an Si substrate 1, an aluminum film 5' is deposited, and an Al2O3 film 7 is formed by a plasma anodic oxidation on the surface. A resist mask is coated, the Al2O3 and Al are etched simultaneously with an etchant, thereby forming aluminum wirings 5, and a protective film 6 is covered. With this configuration, the aluminum wirings covered with alumina having strong corrosion resistance on the surface can be obtained, thereby obtaining a preferable moisture resistant semiconductor device. The surface of the aluminum film is formed in alumina, thereby increasing the contacting strength with a photoresist and the surface reflectivity can be reduced. Accordingly, pattern can be microminiaturized. |
