| 摘要 |
PURPOSE: To obtain an edgeless IGFET for SOI integrated circuit having narrower gate width and high breakdown characteristics by providing source and drain regions in a single crystal silicon body on the opposite sides of a gate such that at least one of them extends only along a part of the corresponding side of the gate. CONSTITUTION: The edgeless field effect transistor comprises a one conductivity type single crystal silicon body 34, a silicon oxide layer 40 provided on the surface of the body 34, a gate 44 provided on the silicon oxide layer 40 and composed of a conductive material extending on the surface 42 of the body 34, and opposite conductivity type source and drain regions 50, 54 extending into the body 34 from the surface 42 thereof on the opposite sides of the gate 44 and at least one of them extends only along a part of the corresponding side of the gate 44. For example, the gate 44 is provided to form a closed loop and one 50 of the source and drain regions 50, 54 is present on the inside of the closed loop of the gate 44 while the other 54 extends only along a part of the outer edge of the gate 44. |
