| 摘要 |
PURPOSE:To form, with a good step coverage, a titanium nitride film with an excellent barrier property on an inner face of a minute hole by a method wherein the titanium nitride film with a specific thickness is formed inside the hole whose width or diameter and aspect ratio are specified. CONSTITUTION:The following are formed on the surface of a semiconductor substrate: an insulating film having a hole whose width or diameter is 1mum or higher, whose aspect ratio is 0.7 or higher whose tilt on a side face is substantially vertical; a titanium nitride film which is extended from the surface of the semiconductor substrate exposed by the hole through an external surface of the hole to the upper part of the insulating film. A film thickness in a thinnest part inside the hole of the titanium nitride film is set to be 0.6 time or higher a film thickness on the insulating film. That is to say, a temperature of the substrate 11 is kept at, e.g., 700 deg.C; titanium tetrachloride is introduced from a gas blowoff port 25 and ammonia is introduced from a gas nozzle 24 individually into a reaction chamber 20; the titanium nitride film is formed on the surface of the substrate 11. By this setup, the titanium nitride film 12 can be formed not only on an upper face of the substrate 11 but also on an inner face of the hole 10. |
