METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES, IN WHICH MATERIAL IS DEPOSITED FROM A REACTION GAS, AND APPARATUS FOR CARRYING OUT SUCH A METHOD

摘要

In the method a number of slices of semiconductor material are heated in a reactor tube arranged inside a furnace tube and having a tube wall which is provided with openings, through which a reaction gas is passed for depositing a semiconductor material. This is effected by producing in the furnace tube a flow of the reaction gas along the outer side of the wall of the reactor tube and by passing only a part of this flow through the openings into the reactor tube. By the use of this method, it is prevented that particles of different size and compositionwhich may be formed in the reaction gas - are deposited on the slices.