| 摘要 |
PURPOSE:To reduce warpage of a semiconductor substrate due to film stress by providing grooves at any process time of forming and at any position on a film to be deposited on the principal plane of the semiconductor. CONSTITUTION:When a semiconductor substrate has been warped, grooves 1 and formed on a deposited film in a dicing line portion on a water by a laser beam. The number of grooves may be increased as necessary, although two grooves, one vertical and one horizontal, are formed in this case. The depth of the groove may take any value, shallower or deeper than, or equal to the deposited film thickness insofar as the warpage of the semiconductor substrate can be reduced to within + or -1-2mum accuracy of which is required for highly accurate patterning. The width of the film may be substantially zero microns if the surface of the substrate is warped in recess and it may be several microns if the surface is warped in projection. No high accuracy in terms of position is required as far as the grooves are positioned within the dicing line portion. The grooves may also be formed on chips on the condition that some chips are sacrificed. Substantially no positional accuracy is required in this case. The grooves may be formed at an arbitrary forming process before the lithography process as far as the warpage of the semiconductor substrate can be reduced.
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