| 摘要 |
The transistor is manufactured by a process for coating the Cr of 1000 ∦on the glass substrate (10), a process for forming a gate electrode pattern (20) by a photo-etching method, a process for forming a-SiN layer (30) of 3000 ∦under the pressure of 10-4 torr and temp. of 250≦̸C in the glow discharging chamber, a process for forming an amorphous semiconductive layer (40) of 300-1000 ∦with SiH4 gas, a process for forming a source (50) and a drain (60) electrode pattern with Al of 1 m a process for forming a transparent layer (70) with ITO, a process for forming a protective layer (80), and a process for forming a light protection layer (90).
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