| 摘要 |
PURPOSE:To improve the degree of integration by a method wherein a polycrystalline silicon film is grown, the polycrystalline silicon film is oxidized selectively, a thin-film region is formed and an impurity is introduced, using an oxide film as a mask. CONSTITUTION:Field oxide films 2 are grown onto a p-type semiconductor substrate 1, and gate oxide films 4 are grown. A gate electrode and a contact window 5 are bored, poly Si is grown, and phosphorus is introduced. A word line 6a and the gate electrode 6b are shaped, As ions are implanted, employing poly Si as a mask, and n-type diffusion layers 3a-3c are formed. SiO2 7 is grown, and a contact hole 8 is bored. Poly Si 9 and SiN 10 are respectively grown continuously, and SiN 10 is patterned. Poly-Si 9 is oxidized, using SiN 10 as a mask, and an oxide film 11 is grown. As ions are implanted, employing the oxide film 11 as a mask, and a region 9b containing an impurity is shaped. SiN 10 and SiO2 are removed respectively, and poly Si 9a, 9b are patterned. A PSG film 12 is grown, a contact hole 13 is bored, and an Al wiring 14 is formed. Accordingly, a power line, etc., in a thin-film are composed of the polycrystalline silicon film of a thick-film in a load resistor, thus improving the degree of integration. |
