发明名称 |
SILICON OXYNITRIDE PASSIVATED SEMICONDUCTOR DEVICE AND METHOD OF MAKING SAME |
摘要 |
<p>SILICON OXYNITRIDE PASSIVATED SEMICONDUCTOR BODY AND METHOD OF MAKING SAME A semiconductor body with an improved passivating layer is disclosed. In one embodiment, the body is a device comprising a semiconductor material having regions of opposite conductivity types which form a semiconductor junction therebetween which extends to a surface of the device. The passivating layer, comprising silicon oxynitride having a refractive index between about 1.55 and 1.75 and a substantial hydrogen content, overlies the surface at the junction. Also disclosed is a method for fabricating such a device wherein the vapor deposition of the passivating layer is carried out at low temperatures from an ambient having a ratio of silicon-containing to oxygen- and nitrogen-containing precursors of between about 1:1.67 and 1:5.</p> |
申请公布号 |
CA1259530(A) |
申请公布日期 |
1989.09.19 |
申请号 |
CA19870526900 |
申请日期 |
1987.01.07 |
申请人 |
RCA CORPORATION |
发明人 |
KAGANOWICZ, GRZEGORZ;ENSTROM, RONALD E.;ROBINSON, JOHN W. |
分类号 |
C23C16/30;H01L21/314;H01L31/0216;H01L31/103;(IPC1-7):H01L21/316;H01L21/318 |
主分类号 |
C23C16/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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