发明名称 SCRIBING METHOD OF SEMICONDUCTOR WAFER
摘要 <p>PURPOSE:To block cracks by trenches and prevent an adverse influence on an electrode pad and the like, even if cracks generate in a pellet, by arranging the trenches on both sides of a scribe line in addition to the scribe line, and scribing a wafer along the scribe line between the trenches. CONSTITUTION:A wafer 1 is scribed along a scribe line 2 between adjacent trenches 5, 5. A pellet 3 is constituted of, e.g., silicon single crystal substrate. In this pellet main body 3', many circuit elements are formed, and a circuit function is assigned. An electrode pad 3'' is arranged on the peripheral part of the pellet main body 3 '. When the wafer 1 is scribed and the pellet 3 is made, cracks 4 may generate on the peripheral part of the pellet 3, at the time of scribing. But since the trenches 5 exist and act as stoppers for the cracks, the pellet main body 3' is not affected by the cracks. Even if cracks 4 generate when the pellet 3 is sucked by a collet, and fixed on a lead-frame and the like, the adverse influence on the pellet main body 3 ' can be prevented by the existence of the trenches 5.</p>
申请公布号 JPH01217942(A) 申请公布日期 1989.08.31
申请号 JP19880042054 申请日期 1988.02.26
申请人 HITACHI LTD;HITACHI VLSI ENG CORP 发明人 SUZUKI MASATO
分类号 H01L21/301;H01L21/78 主分类号 H01L21/301
代理机构 代理人
主权项
地址