| 摘要 |
<p>PURPOSE:To enable the manufacturing of an asymmetric type ZnO varistor without passing a complicated process, by forming a ZnO layer on a substrate or a conductive substrate, forming thereon a metal oxide layer forming an electric potential barrier with the ZnO layer and one side electrode at a constant interval, and forming the other side electrode on the metal oxide layer. CONSTITUTION:On a substrate 11, a ZnO layer 13 is formed. Thereon, a metal oxide layer 14 constituting an electric barrier 15 with the ZnO layer 13, and one side electrode 12 are formed at constant intervals. The other side electrode 16 is formed on the metal oxide layer 14. That is, the electrode 12 is formed not on the substrate 11 but on the ZnO layer 13, and the upper part of the electrode is always exposed. The electrodes 12, 16 are arrange not vertically but in parallel. Therefore, it is not necessary for the ZnO layer 13 to be partially formed by etching or by using a mask. Further the electrode 12, 16 are formed by using the same process. Thereby the manufacturing is enabled without passing complicated process.</p> |
