| 摘要 |
PURPOSE:To realize a TJS laser using an MQW layer as an active layer by a method wherein a first diffusion region reaching at least a quantum well structure is formed through selective diffusion, a film is formed onto at least the first diffusion region in the surface of a semiconductor wafer, the temperature of the semiconductor wafer is elevated and a second diffusion region is formed. CONSTITUTION:A second conductivity type first diffusion region 5 reaching at least quantum well structure 3 is shaped to one part of, a semiconductor wafer, in which the quantum well structure 3 is held by first conductivity type two clad layers 2, 4, through selective diffusion. A film 9 is formed onto at least said second conductivity type first diffusion region 5 in the surface of said semiconductor wafer, and the temperature of said semiconductor wafer is elevated and a second conductivity type second diffusion region 7 is shaped. The n-AlGaAs clad layer 2, an MWQ layer 3 and the n-AlGaAs clad layer 4 are grown successively onto a semi-insulating GaAs substrate 1, and the p<+>- diffusion region 5 is formed. The dielectric film 9 composed of SiO2, Si3N4 or the like is shaped, and the whole is thermally treated for thirty min at approximately 800 deg.C and the p-diffusion region 7 is formed. |
