| 摘要 |
PURPOSE:To improve conversion efficiency and form an electrode easily, by causing a highly concentrated impurity layer functioning as a BSF to be adjacent partially to a plane opposite to a light receiving plane and making the rear electrode come into ohmic contact with the highly concentrated impurity layer and providing a metallic film at the other part. CONSTITUTION:An n<+> type layer 13 is formed at one side of a principal surface 11 which forms a light receiving plane by using a p-type silicon substrate 1 with a diffusing process. A resist 6 is printed at a BSF layer formation part of the other side of the principal surface 12 which forms the rear to form metallic oxide films 4 of TiO2 or SnO2. After that, the resist 6 is removed and patterning is carried out. An Al paste 5 consisting of Al and silicon is printed at the rear and the BSF is formed by heat treatment at a p<+> type layer 15 which forms a BSF layer and at the interface between an electrode 5 of the other side of Al and the metallic oxide films 4 simultaneously. |
