| 摘要 |
The present invention relates to an arrangement for the non-destructive measurement of metal traces in the surface of material samples in which the surface is irradiated with X-ray radiation and a detector, fastened above the material sample, spectrometrically examines the fluorescent radiation emanating from the material sample. Metal impurities are detected in the surface of, for example, silicon wafers down to about 1011 atoms/cm2, on-line, with the wafers being free from contamination by the measuring process. It is possible to sweep the entire surface area of wafers having a diameter up to about 150 mm at the locations fixed by the respective standards. The X-ray radiation directed onto the surface of the material sample by means of an adjustable X-ray source, the divergence of the exciting X-ray radiation being limited by two aperture members, the aperture members being disposed in a quartz body serving as an optical bench. A positioning device is provided with which the material sample can be pressed against a surface of the quartz body.
|
