| 摘要 |
PURPOSE:To cut down space of a resistor forming part in a linear IC, etc., thereby augmenting the integration by a method wherein the gaps between diffused layers of adjacent resistors are specified to be multiple types differentiated from one another in different positions. CONSTITUTION:The gap W' between two diffused resistors 2 (R1, R2) is specified to be, e.g., around 10mum in consideration of the expansion of depletion layers 3 and the errors in mask. On the other hand, adjacent diffusion resistors R3, R4 are parallel-connected on the parts of diffused layers or electrode parts at almost equivalent potentials so that the expansion of depletion layers, the MOS effect, etc., between resistor need not be taken into consideration enabling the resistor gap W2' to be specified narrower than the gap W1', e.g., 8mum. Through these procedures, the gap W2' between adjacent diffusion resistors R3, R4 at equivalent potentials can be specified narrower than the gap W1' between the adjacent diffusion resistors R1, R2 at different potentials so that the space may be cut down to make IC highly integrated without imperiling the functions of IC. |
