发明名称 METHOD FOR JOINTING SEMICONDUCTOR DEVICE SUBSTRATES
摘要 PURPOSE:To enable multilayer structure device substrates to be manufactured, by coating a group of substrates with metallic oxide or its gelling liquid substance to joint them and then subjecting them to high-temperature treatment. CONSTITUTION:Metallic alkoxide is hydrolyzed in a solvent to produce solution in a sol state. Substrate surfaces to be jointed are then coated with this solution. Dehydration, condensation, and solvent remoual for this solution are then made to advance so that it becomes in a semi-gelling state. Substrates themselves are then sticked, the gell in the jointed layer is dehydrated and condensed, and concurrently a bridge is formed between both the substrates to obtain their temporary joint. The temporarily jointed substrates are then subjected to heat treatment at 500 deg.C or more, so that a sintering process is performed to ensure non-porosity. At a temperature below 500 deg.C, their non-porosity state is incomplete and therefore they become short of strength. Thus, multilayer structure device substrates having jointed layers high in thermostability can be formed in this way.
申请公布号 JPS62264651(A) 申请公布日期 1987.11.17
申请号 JP19860108379 申请日期 1986.05.12
申请人 SUMITOMO METAL MINING CO LTD 发明人 YAMADA ATSUSHI
分类号 H01L27/00;H01L21/02;H01L21/18 主分类号 H01L27/00
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