| 摘要 |
PURPOSE:To form a fine pattern having excellent heat resistance in addition to excellent dimensional accuracy and pattern formation by combining a specified cresol-novolak resin and a specified photosensitizer. CONSTITUTION:The positive photoresist composition contains the cresol-novolak resin obtd. from a cresol mixture of 10-45wt.% of m-cresol and 90-55wt.% of p-cresol and the photosensitizer contg. a naphthoquinone diazide sulfonate as a main component. The photosensitizer is composed of an esterified reaction product of polyhydroxybenzophenone such as 2,3,4-trihydroxybenzophenone and 2,3,4,4'-tetrahydroxybenzophenone, etc., and 1,2-naphthoquinone diazide-4- sulfonic acid or 1,2-naphthoquinone diazide-5-sulfonic acid. The esterified reaction product containers >=80mol.% of the product esterified an average more than 75% of the hydroxyl group contd. in polyhydroxybenzophenone, in the esterified reaction. Thus, the positive type photoresist having the excellent heat-resisting property, dimensional stability and pattern formation can be obtd. |
