| 摘要 |
PURPOSE:To prevent deterioration of resolution and contrast of a resist pattern by constituting a pattern forming material of a mixture of resins having a specified compsn. characterized by sensitivity for ultraviolet rays having a specified wavelength, a compd. having an SO2Cl group, and a solvent. CONSTITUTION:A pattern forming material is prepd. from a kind of resin expressed by the general formula I or a mixture of >=2 kinds of the resin, a compd. contg. an SO2Cl group, and a solvent. In formula I, each l, m is an integer >=1; n is an integer including 0; R1 is an H atom, alkyl group, alkenyl group, OH group, or alkoxy group; each R2 and R3 is an H atom, alkyl group, alkenyl group, a group expressed by formula II, etc., wherein at least a part of R2 and/or R3 includes the group expressed by formula II (P is 0, 1, 2 or 3). By exposing the pattern forming material to KrF excimer laser having 249nm wavelength, the deterioration of resolution and contrast of generated resist pattern is prevented due to high absorption of exposed light, and an ultrafine resist pattern having desirable shape is obtd. |
