| 摘要 |
PURPOSE:To prevent bias currents from concentrating and flowing to the front edge sections of electrodes by forming trenches respectively parallel with the end sections of the electrodes and having specified depth near the end sections of the electrodes on a compound semiconductor. CONSTITUTION:Trenches 7 are shaped near the end sections of each electrode 3 and in specified depth to a compound semiconductor 2 in parallel with the end sections. Consequently, bias currents 6 are collected to the substrate 1 side once by the trenches 7 even when bias currents 6 concentrate and flow to a low resistance layer 5 by forming the trenches 7 to the compound semiconductor 2, and released toward the electrodes 3, thus largely making the uniformity of current density in the electrodes 3 better than conventional devices. It is preferable that the width of the trench 7 is thinned extremely. It is because the increase of resistance is reduced by collecting bias currents 6 to the substrate 1 side. The trench 7 is shaped by cutting the low resistance layer 5, and one third or half of the thickness of the compound semiconductor 2 is proper in order to improve the uniformity of current density in the electrode 3 in the depth of the trench 7. |
