| 摘要 |
PROBLEM TO BE SOLVED: To provide plasma treating equipment, which relaxes thermal stress of a Faraday shield interiorly arranged in a dielectric wall, and can prevent generation of cracks. SOLUTION: A treatment chamber 102 of etching equipment 100 is formed in a space surrounded by a treating vessel 104 and a dielectric wall 106. In the treatment chamber 102, a lower electrode 108 on which a wafer W is mounted is arranged. On the dielectric wall 106, a high frequency antenna 122 is installed. A Faraday shield (conductor film) 128 in which slits 130 are formed is clamped by an upper and a lower dielectric layers 107, 109 constituting the dielectric wall 106. The thickness of the Faraday shield 128 is 10-10μm. The ratio of thermal expansion coefficient to the upper and the lower dielectric layers 107, 109 is set as 0.7<= (the dielectric film/the dielectric layer) <=1.7. The Faraday shield is arranged in the direction almost perpendicular to the direction of a magnetic field formed by the high frequency antenna 122.
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