发明名称 |
Integrated memory circuit having a differential read amplifier |
摘要 |
A monolithic integrated memory includes a differential read amplifier circuit which is associated with a column of the memory and which has two source-coupled field effect transistors, the coupling point of which is controlled by a current source which itself is controlled by the output signal of a decoder stage which enables the selection of the memory column. The gate of each coupled transistor receives the signal of a bit line of the memory column, while the drains of the coupled transistors apply a signal to the read bus of the memory. A translator circuit is provided for translating the levels of the signals transported by the bit lines in order to ensure that these levels are at most equal to the levels of the signals transported by the read bus, so that the gate-drain capacitances of the coupled transistors of the differential amplifier are negligibly small.
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申请公布号 |
US4831588(A) |
申请公布日期 |
1989.05.16 |
申请号 |
US19870136576 |
申请日期 |
1987.12.22 |
申请人 |
U.S. PHILIPS CORP. |
发明人 |
DUCOURANT, THIERRY;GABILLARD, BERTRAND |
分类号 |
G11C11/41;G11C7/06;G11C11/419 |
主分类号 |
G11C11/41 |
代理机构 |
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主权项 |
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地址 |
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