ORGANIC ELECTRODES AND ELECTRONIC DEVICES

摘要

A device comprising: a transistor comprising: at least one source; at least one drain; at least one channel; at least one gate insulator comprising (i) a first surface defining a first side, and (ii) a second surface defining a second side and opposing the first surface and first side, wherein the source and the drain are disposed on the gate insulator first side; at least one first gate material disposed on the gate insulator second side; wherein the first gate material does not substantially overlap with the source or the drain so as to minimize parasitic capacitance, the transistor further comprises a second gate material disposed away from the second side so that the first gate material is between the gate insulator and the second gate material. The second gate material can comprise a metal. The second gate material can have a higher conductivity than the first gate material. The second gate material can substantially overlap with the source or the drain. The transistor can be adapted for a bottom-gate configuration or a top-gate configuration. Applications included printed electronics.