| 摘要 |
PURPOSE:To increase cell density while reducing the cell dimensions, and to decrease on-resistances while decreasing a contact resistance between a source electrode and a source region and well by punching a groove which reaches the well while extending through the source region at a contact between the source electrode and the source region and well, or like means. CONSTITUTION:A vertical MOSFET comprises a first conductive type layer 2 acting as a drain; a second conductive type well 3 arranged within the first conductive type layer 2; a first conductive type source region 4 arranged within the well 3; a gate electrode, which will induce a channel 3a for the well 3, arranged on the well 3 located between the source region 4 and the first conductive type layer 2 while interposing a gate insulating film 5; a source electrode 13 which is connected to the well 3 and source region 4 while interposing, at least relative to the well 3, a contact part 11 consisting of a high melting point metal formed within a groove 9, the groove being punched in such a way as to extend through the source region 4. For example, within said groove 9, tungsten 11 is deposited on the bottom thereof, or a P-well 3, while N<+>- polycrystalline silicon 12 is buried therein. |
