| 摘要 |
PURPOSE:To provide a semiconductor device, which has a SBD property and is excellent in a voltage resistant property and large in capacitance, composed of an SST-type bipolar CMOS provided with an SBD built in it by a method wherein etching is concurrently performed onto an n-type epitaxial silicon substrate of polycrystalline doped with a P-type impurity and an SST-type transistor for boring a window in a base and an emitter region. CONSTITUTION:An oxide insulating film (SiO2) 22 and a polycrystalline silicon layer 23 doped with a P-type impurity high in concentration are concurrently laminated on an n-epitaxial silicon single crystal substrate 21 and an SST-type bipolar forming section respectively through an ordinary method. Next, a SiO2 layer 25 is coated thereon through a CVD method. And, a hepa SiO2 24 is necessary as a base and an emitter insulating film of an LLD-MOS Tr and the SST- type bipolar Tr during a processing of a SST-type-Bi-CMOS, which is formed through an anisotropic etching after the formation of the SiO2 film. Furthermore, the SiO2 film 25 formed through a CVD method is subjected to etching for the boring of a window and also the formation of a guard ring 26. By these processes, an SBD can be built in an SST-type bipolar CMOS while a processing is performed. |
