发明名称 SELECTION OF SINGLE AXIAL MODE SEMICONDUCTOR LASER
摘要 PURPOSE:To select and remove elements of a single axial mode characteristic unstable with time by performing a heat cycle test on single axial mode semiconductor laser welded to a heat absorber by fusion and measuring changes of the output light spectrum characteristic. CONSTITUTION:A heat cycle test performed on single axial mode semiconductor laser welded to a heat absorber by fusion. A submode suppression ratio of the single axial mode semiconductor laser before and after the heat cycle test is compared. The heat cycle test is repeated at low temperature of -65 deg.C and high temperature of 150 deg.C, a cycle of repetition is 60 minutes, the holding time at each of the low temperature and high temperature is at least 20 minutes or longer, and the number of repetition is at least 10 or more. Therefore, elements of single axial mode characteristics unstable with time are selected and removed without generating unnecessary accelerated deterioration.
申请公布号 JPS6461078(A) 申请公布日期 1989.03.08
申请号 JP19870219425 申请日期 1987.09.01
申请人 NEC CORP 发明人 UEHARA KUNIO
分类号 H01L21/66;H01S5/00;H01S5/06 主分类号 H01L21/66
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