发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the insulating property against electrostatic noise by reducing a strong electric field produced among signal lines owing to the electrostatic noise by providing a third conductor layer adapted to float electrically in an insulating film existing among the signal lines at intersections among the signal lines. CONSTITUTION:Electrostatic noise produced outside an LSI is applied to an electrode pad 11, which serves to input or output a signal to or from the LSI, from a lead of a package via a bonding wire. An input protective resistor 12 comprises first layer polysilicon. An input protective transistor 13 allows its gate and source to be grounded and its drain to be connected to one end of the input protective resistor 12. A wiring 14 comprises first polysilicon being the same as in the input protective resistor 12. Another signal line 15, which intersects the wiring 14, comprises a metal layer. A conductor layer 16 comprising floating second layer polysilicon is formed in an insulating film formed between the first layer polysilicon and the metal layer, whose configuration is the same as that of an intersection between the first layer polysilicon and the metal layer or is of that completely covering part of the same.
申请公布号 JPS6453564(A) 申请公布日期 1989.03.01
申请号 JP19870212130 申请日期 1987.08.25
申请人 SHARP CORP 发明人 MITSUMOTO TOSHIO
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L23/522;H01L27/04 主分类号 H01L23/52
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