| 摘要 |
PURPOSE:To easily form a wiring part on a PSG film and to form the device characteristic of a desired value by a method wherein, when a MOSFET is to be manufactured, a PSG interlayer insulating film is melted and flattened and, after that, a source and a drain are formed by implanting an impurity. CONSTITUTION:An SiO2 film 17 is formed on an Si substrate 16; an island- shaped single-crystal Si layer (an SOI island) 19 is formed thereon. A gate insulating film 11 and a gate electrode 12 are formed on the surface of the SOI island 19; after that, a PSG (phospho-silicate glass) insulating film 13 is deposited on the whole surface of the substrate. A contact hole is made in the PSG film 13; after that, the assembly is annealed in an atmosphere of N2 at 1050 deg.C for 30 minutes; the PSG film is melted; the surface is flattened. Then, ions of As are implanted via the contact hole; a source 14 and a drain 15 are formed. Then, an Al wiring part 22 is formed. Because the PSG film is flattened, a disconnection of the Al wiring part can be prevented. After the formation of the source and the drain, a high-temperature process is not executed; accordingly, a device characteristic is not changed. |
