Method for producing planar epitaxial layers by means of selective metal-organic vapour phase epitaxy (MOVPE)

摘要

A method for producing planar semiconductor layers on a planar, patterned semiconductor base material by means of selective MOVPE at atmospheric pressure is proposed in which the boundary overgrowths (14) arising at the boundaries between areas masked with a dielectric layer and unmasked areas are avoided. Isotropic etching of the exposed base material results in overhangs consisting of the dielectric layer which prevent any deposition of material from the vapour phase and only permit mass transfer. With an etching depth of from 3 to 4 mu m and overhangs of approximately 4 mu m on an indium phosphide substrate, boundary overgrowths are completely avoided.